- 28 June 2005 -

STS Pegasus may promise SiC etch

Surface Technology Systems has released its latest decoupled plasma source Pegasus. STS VC Mutsuo Makuda notes "Over the last 12 months, Pegasus has been extensively tested and proven on samples of existing and emerging products supplied by our customers.

"The introduction of Pegasus has already resulted in several orders from companies with demanding applications in production environments. We expect to see a significant impact on sales to corporate R&D and mass-production customers utilising deep silicon etch processes.”

The equipment develops STS specialism in plasma process technologies for the growing MEMS and related markets. Through an in-depth understanding of the Bosch process and the required hardware, etch rates for silicon greater than 25µm/minute with excellent profile control and resist selectivity have been achieved.

Improved performance versus competing decoupled plasma sources (DPS)
Being designed for even plasma distribution at the substrate surface Pegasus delivers
improved process uniformity; uniform high etch rates (high radical density);
better profile control, higher selectivity and enhanced dritical dimension control.

The Pegasus’ process module includes new developments and enhancements, but key is its high uniformity plasma source design. This high-density decoupled source has been shown to increase etch rates by 30% over competing systems and mask selectivity by 35% or more. Other pluses include smoother side walls, and SOI without notching.

One complementary role for Pegasus might come in SiC etch. STS Inductively Coupled Plasma Etech has shown to provide higher etch rates for SiC and other materials. Deep etch processes for SiC are needed to realise the intrinsic advantages of the compound for power electronics and MEMS devices in harsh environments. STS is working with customers world-wide to optimise processes for SiC device fabrication, specifically increase etch rate, etch profile control, selectivity and process uniformity.

Pegasus incorporates STS’ patented parameter ramping and SOI technologies. The modular design is optimised for reliability and ease of maintenance giving a reduced footprint and improved access for high performance\low COO.

“Pegasus brings advanced processes to the MEMs market and helps make those applications currently in R&D, commercially viable,” said Leslie Lea, R&D director. “In markets such as advanced wafer packaging, the higher selectivity and etch rate that Pegasus offers, makes fabrication of through wafer interconnects viable. System-in-a-package (SiPs) incorporating MEMs, optoelectronics and bio chips can be realised. As the electronics and technology industries move to using nanotechnology, Pegasus really comes into its own.”