- June 22, 2005 -

Intrinsic offer 3-inch GaN and SiC

Intrinsic Semiconductor, a privately held manufacturer of wide bandgap materials based in Dulles, Va, has launched three new SiC and GaN product categories for high power and high frequency device markets and appointed William Weisbecker to its management team as VP of sales and marketing.

It adds 3-inch diameter silicon carbide (SiC) wafers of both insulating and conducting types, SiC epitaxy and 3-inch GaN wafers to its product portfolio. Production grade 3-inch diameter SiC wafers and corresponding 3-inch diameter SiC epiwafers and gallium nitride high-electron mobility transistor (HEMT) epiwafers are now available.

Cengiz Balkas, Intrinsic president and CEO said, "The commercial release of the 3-inch SiC-based wafer products follows our planned technology roadmap. These SiC and GaN products address large growing opportunities in the power and RF markets, respectively. The quality grades of these products are commensurate with earlier 2-inch diameter versions. With our vertically integrated approach we believe that our pricing will remain competitive.

"The development of 3-inch SiC and GaN based products represents an important transition point in commercialisation of wide band gap technologies. The demand for 3-inch wafers and epiwafers are being driven by both military and commercial applications. Having reached 3-inch, the development of cost-affordable SiC and GaN based devices on SiC substrates are now becoming a reality,"

The appointment of William Weisbecker brings the former co-founder and VP of sales and marketing at Quantum Epitaxial Designs, now part of IQE Plc on board. Weisbecker has also held sales and marketing positions at GAIN Electronics and Sumitomo Electric Industries.