- 28 April 2006 -

SiC fab formally opened by US Senator

Advanced Power Technology, Inc., has formally launched the construction of its SiC manufacturing fab at Bend, OR, USA, with an inauguration event featuring a keynote address by US Senator Gordon Smith. It follows the previous announcement in February by APT of a licensing agreement with Northrop Grumman Corporation to certain silicon carbide manufacturing technology.

Other local dignitaries and senior company management were present, including James J. Peterson, Chairman and CEO of Microsemi Corporation. Microsemi is in the final stages of acquiring APT.

Senator Smith lauded both companies for their commitment to advanced semiconductor technology which has been developed in part for the Defense Department's electronics programs.

Senator Smith said, "The efforts here at APT are playing a key role in supporting our efforts to maintain peace around the world through the supply of components for communications, monitoring, and surveillance systems."

The driving force for the adoption of silicon carbide for military as well as civilian applications is the need to reduce weight and size of power control and management systems and their associated support equipment, in particular cooling systems and heat dispersing packaging. SiC semiconductors have demonstrated large performance advantages in numerous test beds over the most advanced silicon components.
Military applications include radar, hybrid power systems, electric power control and distribution, electronic jamming, and wideband communications systems. Potential non-military applications that can benefit from silicon carbide's military-level performance include hybrid vehicles, electric power transmission, computer/servers, medical systems, and alternative energy.

Web: www.advancedpower.com