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- 20 July 2006 -
AIXTRON receives first order
for merged ALD and AVD® technologies
Aachen, Germany – July 10, 2006 – AIXTRON AG,
a leading manufacturer of deposition equipment to the global
semiconductor industry, today announced that it has received
the first system order from a leading Asian memory manufacturer
for a combined Genus 300 mm Atomic Layer Deposition (ALD)
StrataGem and Atomic Vapor Deposition (AVD) technologies.
This order represents a progressive step into next-generation
solutions for High-k Dielectrics in DRAM Capacitor sub 45nm
high volume production. DRAM technology continues to be a
major driver of innovations in process technology and manufacturing
equipment for Genus products.
Installation will start during third quarter 2006; revenues
will be booked in the second half of 2006.
One year after the completion of the AIXTRON – Genus
merger, the new entity reaps further significant benefits
from its strength in product development.
ALD and AVD technologies have already demonstrated that they
can overcome many of the limitations of current film deposition
techniques. The process modules combining ALD and AVD technologies
will be installed at the customer’s purpose-built 300
mm R&D fab, are a driving force into mainstream/HV semiconductor
processing.
The joint development program represents an important step
forward in strengthening AIXTRON’s position for providing
enabling deposition solutions for these emerging semiconductor
applications.
The initial work will focus on:
- Evaluation of various high-k dielectrics and metal gate
materials for large-scale production purposes
- Integration of those materials into high-k gate stacks
& advanced DRAM capacitors
- Optimization of DRAM and CMOS device structures for Sub-45nm.
Dr. William W. R. Elder, the Member of AIXTRON’s Executive
Board responsible for all of AIXTRON’s silicon business
interests comments: “Many of Genus' primary customers
are major chip manufacturers in the memory (DRAM and FLASH)
segment of the semiconductor industry. The process modules
are based on a patented process chamber concept and have achieved
a leading position for the deposition of tungsten silicide
(WSix) and high-k materials, primarily used in memory and
capacitor applications.
With ALD, AVD technologies and the company’s core tungsten
silicide CVD platform, we are now able to offer our customers
a full and comprehensive portfolio of semiconductor process
technologies.”
The Department of Information Technology has launched several
programs to develop an indigenous photonics capability.
The initiative covers systems, devices and materials, with
research being conducted at several Indian research and educational
institutes in order to hasten development.
A national facility will be created for packaging photonic
devices at the Society for Applied Microwave Electronic Engineering
and Research in Mumbai. An auto-alignment system to align
fibers with devices for maximum coupling of light will also
be established at the Mumbai facility.
Passive photonic devices such as planar light circuits built
on a variety of substrates will benefit from the packaging
work. Trial packaging runs have been carried out on power
splitters, and companies are now evaluating the splitters.
A laser weld system needed for active device packaging is
being set up here, according to the IT ministry.
Elsewhere, a national institute at Pilani in northern India
has developed laser diode chips while efforts are underway
at the Indian Institute of Technology in New Delhi to develop
an optical amplifier system.
A preliminary study is also underway at an institute here
on photonic devices using polymer as a sandwich layer between
fixed and flexible electrodes.
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