- 21 November 2005 -

Toshiba launches SiGe medium-power amp

Toshiba America Electronic Components Inc (TAEC) and its parent Toshiba Corp. have launched a new medium-power silicon germanium (SiGe) bipolar complementary metal oxide semiconductor (BiCMOS) power amplifier, the TA4401CT, that is well suited for use in 1.9-2.5GHz band wireless applications, including wireless LAN (WLAN), personal handy system (PHS) and bluetooth (BT). The TA4401CT is the first in an expected family of SiGe power amplifiers.

“Applications such as WLAN, PHS and BT are experiencing constant pressure to reduce price while maintaining or improving performance," said Tetsuya Iwasaki, TAEC’s manager of Logic/RF/Small Signal devices. Samples are being provided to several WLAN and BT module makers in North America and PHS handset manufacturers in China.

The TA4401CT is designed with three cascaded RF stages optimized for linearity, efficiency and low-power consumption. It is specifically applicable for use in regulated IEEE802.11b/g WLAN systems and is also targeted for PHS applications. It delivers IEEE802.11g standard 18dBm of average output power with 27.5dB of gain and 3% of error vector magnitude (EVM) performance, while consuming just 125mA of current at 3.3V power supply voltage. Its nano-amp power shutdown mode also dramatically improves battery life. The power amplifier can also meet PHS adjacent channel power ratio (ACPR) specifications up to 23dBm of output power with 35dB of gain, and 210mA of supply current. The TA4401CT is housed in a low profile lead-free 2.9mm 16-pin chip-scale package (CSP).

Samples are available on request, priced at $1.00 each. Volume production isscheduled to begin in Q2/2006.

Web: http://www.toshiba.com