- 22 June 2006 -

Toshiba chip is first in the 6.4 to 7.2GHz, 7.1 to 7.9HGz and 5.3 to 5.9GHz Frequency Ranges

Committed to giving its customers the broadest range of leading-edge microwave products, Toshiba America Electronic Components, Inc. (TAEC) announced the availability of new C-Band GaAs FETs that are the industry's first in each frequency range, and have the highest output power now available from a single device for that range.

TAEC was displaying its new C-Band GaAs FETs, along with other new microwave devices, in Booth #1046 at IEEE MTT-S International Microwave Symposium in San Francisco.

These new devices, developed in-house by Toshiba Corp., expand its 60W line-up that currently features parts in other C-band frequency ranges. Designated TIM6472-60SL and TIM7179-60SL, they feature an output power of 48.0dBm (typical) and were developed for use in Solid State Power Amplifiers (SSPAs) for satellite communication and radar applications that are primarily supported by Traveling Wave Tube Amplifiers (TWTAs). In addition, Toshiba also added a new High Power GaAs FET, designated TIM5359-80SL, to its 80W line-up, which features an output power of 49.0dBm (typical)
Higher power SSPAs are in demand for both commercial and government satellite communications systems for a wide range of applications including global telecommunications, weather monitoring, airport traffic controlling, as well as defense and homeland security applications.

"Toshiba is the first to offer additional frequencies for the 60W and 80W C-band GaAs FET, which means our customers can find expanded market opportunities in the new frequency range," said Christine Lee, business development manager for Microwave Devices at TAEC. "Coupled with our ability to provide the highest output power, Toshiba has a leading solution for next-generation SSPAs and microwave radars."

To simplify re-design, Toshiba maintained the footprint of new FETs. The 10V GaAs FET for 60W and 80W are offered in packages measuring 24.5mm x 17.4mm x 5.5mm.
Each of the new Power GaAs FETs are implemented in Toshiba's Heterojunction Field Effect Transition (HFET) process technology and employ Toshiba's cutting-edge ion implantation technology to enable development of the higher output FETs. The HFET process is ideal for high power microwave devices because of its high carrier concentration that enhances output power and gain. Toshiba plans to use this HFET process to develop additional 60W and higher output power devices for other C-band frequency ranges as market conditions warrant.

Toshiba is an industry leader in microwave devices, with a history of industry achievements in output power, small size and performance. The company's family of C-Band components provides state-of-the-art power and efficiency for satellite communication applications, with a broad selection of Power GaAs FET products. The products are single-ended devices featuring high linearity, Class A operation and are hermetically sealed for high reliability.

Engineering samples of the TIM6472/7179-60SL 60W C-Band GaAs FET will be available in 3Q06 and samples of the TIM5359-80SL 80W C-band GaAs FET will be available in 4Q06, with prices beginning at $1,000 and $1,200 respectively.

www.chips.toshiba.com