- 06th November 2006

Nitronex Debuts Power Transistors for Broadband

Nitronex recently debuted the first two in a series of parts from its broadband product line of RF power transistors. Available from late November, the NPTB00025 and NPTB00050 target applications requiring high power and broad bandwidth. These include public safety radio networks, medical instrumentation and military systems.

• NPTB00025 features saturated power of 25W at 3GHz and 28V with small-signal gain of 13.5dB and drain efficiency of 65%.

• NPTB00050 provides 50W at 3GHz and 28V with small-signal gain of 11.5dB and drain efficiency of 60%.

Nitronex offers a large-signal, non-linear model in either ADS or Microwave Office compatible formats. Both devices operate over frequencies from 3.8GHz to 125MHz thanks to the company’s recently qualified NRF1 GaN-on-silicon process.

Kevin Linthicum, CTO and VP of Engineering says, "The RF transistors are designed to exploit the larger impedances offered by our GaN-on-Si HEMT technology, allowing our customers the design ease and freedom to optimize for power, gain and high efficiency over very wide bandwidths. Nitronex is committed to the RF power market and in the coming months we will unveil higher-power versions of these parts, including devices developed in Gemini packages."

Web: www.nitronex.com